报告题目：Topological states in semiconductor moir superlattices  半导体莫尔超晶格中的拓扑电子态 

　　主讲人：吴冯成 教授（武汉大学物理科学与技术学院）

　　Email：wufcheng@whu.edu.cn 

　　报告时间：2023年11月03日（星期五），下午15：30 

　　报告地点：师昌绪楼408 

　　  

　　摘要： 

　　Moir superlattices form in van der Waals bilayers with a small lattice mismatch or misalignment. I will present theoretical proposals of using moir bilayers as a quantum simulation platform to realize model Hamiltonians. In semiconducting transition metal dichalcogenide (TMD) heterobilayers, isolated flat moir bands can be used to simulate Fermi-Hubbard model on a triangular lattice, in which parameters such as bandwidth, interaction strength, and band filling are widely tunable. When the two layers are formed from the same TMD, holes in K valleys move in a layer-pseudospin skyrmion texture in real space. The low-energy moir bands can be mapped to the quantum-spin-Hall Kane-Mele model for suitable model parameters. I will discuss recent experimental and theoretical progress on topological states in moir TMD superlattices. 

 

个人简介：

Fengcheng Wu is a Professor in the School of Physics and Technology at Wuhan University. He received his BSc in Physics from University of Science and Technology of China in 2011 and PhD in physics from University of Texas at Austin in 2016. He performed postdoc research at Argonne National Laboratory (2016-2018) and University of Maryland (2018-2020). His research is on condensed matter theory, with a focus on low-dimensional quantum physics. He made a number of theoretical predictions for physics in moir superlattices, which have recently been experimentally realized/observed. He coauthored about 60 papers, including publications in Nature, Science, and Physical Review Letters.